Early nucleation stages of low density InAs quantum dots nucleation on GaAs by MOVPE

Photoluminescence evolution in InAs/InP quantum dots grown by MOVPE

Self-assembled quantum dots of InAs have been grown on InP substrates by metal-organic vapour phase epitaxy. The effect of the growth temperature and the growth rate on the morphology and the optical properties of the quantum dots is studied using atomic force microscopy and photoluminescence spectroscopy. The spectral shape of the low temperature photoluminescence depends strongly on the growt...

Optical characterisation of MOVPE grown vertically correlated InAs/GaAs quantum dots

Structures with self-organised InAs quantum dots in a GaAs matrix were grown by the low-pressure metal-organic vapour phase epitaxy (LP-MOVPE) technique. Photoluminescence in combination with photomodulated reflectance spectroscopy were used as the main characterisation methods for the growth optimisation. Results show that photoreflectance spectroscopy is an excellent tool for characterisation...

Photoluminescence from low temperature grown InAs/GaAs quantum dots

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Interaction and Cooperative Nucleation of InAsSbP Quantum Dots and Pits on InAs(100) Substrate

An example of InAsSbP quaternary quantum dots (QDs), pits and dots-pits cooperative structures' growth on InAs(100) substrates by liquid phase epitaxy (LPE) is reported. The interaction and surface morphology of the dots-pits combinations are investigated by the high-resolution scanning electron microscope. Bimodal growth mechanism for the both QDs and pits nucleation is observed. Cooperative s...

Dephasing in InAs/GaAs quantum dots